Chemical Disorder in 6H-SiC Irradiated with Both He and Fe Ions Followed by 1500 °C Annealing: Electron Energy-Loss Spectroscopy Analysis
نویسندگان
چکیده
A good understanding of the chemical disorder in silicon carbide (SiC) after ion irradiation is crucial for evaluating structural stability both semiconductor and nuclear power systems. In this study, 6H-SiC single-crystal was irradiated with 500 keV He 2.5 MeV Fe ions at room temperature, followed by annealing 1500 °C 2 h. The disorders were investigated electron energy-loss spectroscopy transmission microscopy 200 kV. Facetted voids found end region damaged layer. Compared substrate region, Si at.% lower, while values C O higher, particular inner voids. SiCOx (x < 1) bonds surface detected. energy losses Si, edges shifted to be lower possible reason discussed, research results will used irradiation-induced damage SiC.
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ژورنال
عنوان ژورنال: Crystals
سال: 2022
ISSN: ['2073-4352']
DOI: https://doi.org/10.3390/cryst12050687